PinoutDescriptionThe TPIC1346DBTRG4 is designed as one kind of monolithic gate-protected power DMOS array device that consists of six electricallyisolated N-channel enhancement-mode DMOS transistors configured as a three-half H-bridge. And this device is available in 15-pin through-hole (KTS) and ...
TPIC1346DBTRG4: PinoutDescriptionThe TPIC1346DBTRG4 is designed as one kind of monolithic gate-protected power DMOS array device that consists of six electricallyisolated N-channel enhancement-mode DMOS transistors...
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The TPIC1346DBTRG4 is designed as one kind of monolithic gate-protected power DMOS array device that consists of six electrically
isolated N-channel enhancement-mode DMOS transistors configured as a three-half H-bridge. And this device is available in 15-pin through-hole (KTS) and surface-mount (KTR) PowerFLEXE packages.
Features of the TPIC1346DBTRG4 are:(1)configured for 3-phase brushless motor drive; (2)low rDS(on): 0.25 W Typ; (3)High Voltage Output: 30 V; (4)Pulsed Current: 12 A per channel; (5)input transient and ESD protection; (6)compatible with high-side and low-side current sense resistors.
The absolute maximum ratings of the TPIC1346DBTRG4 can be summarized as:(1)Drain-to-source voltage, VDS: 30 V;(2)Output-to-GND voltage: 30 V;(3)SOURCE-to-SUB/GND voltage: 0.3 V to 20 V;(4)Gate-to-source voltage range, VGS:0.3 V to 20 V;(5)Continuous output current, each output, all outputs on: 3 A;(6)Continuous source-to-drain diode current: 3 A;(7)Pulsed output current, each output, Imax, TC = 25°C: 12 A;(8)Continuous VDD and SOURCE current, TC = 25°C: 3 A;(9)Continuous total dissipation, TC = 25°C: 13.9 W;(10)Operating virtual junction temperature range: 40°C to 150°C.etc. If you want to know more information about the TPIC1346DBTRG4, please download the datasheet in www.seekic.com or www.chinaicmart.com .