TVS Diode Arrays 120V 1mA Bidirect
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Polarity : | Bidirectional | Channels : | 4 Channels | ||
Operating Voltage : | 105 V | Package / Case : | SO-8 | ||
Capacitance : | 150 pF | Breakdown Voltage : | 120 V | ||
Minimum Operating Temperature : | - 55 C | Maximum Operating Temperature : | + 150 C | ||
Series : | TPI | Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit | |
IPP |
Peak pulse current (see note 1) |
10/1000 ms 5/320 ms 2/10 ms |
30 40 90 |
A |
ITSM |
Non repetitivesurge peak on-state current (F = 50 Hz). |
tp = 10ms t =1 s |
8 3.5 |
A |
Tstg Tj |
Storage temperature range Maximum junction temperature |
- 55 to + 150 150 |
°C | |
TL |
Maximum lead temperature for soldering during 10s |
260 |
°C |
Dedicated devices for ISDN interface and high speed data telecom line protection. Equivalent to a triple TRISIL with low capacitance. These TPI12011N devices provide : - low capacitance from lines to ground, allowing high speed transmission without signal attenuation. - good capacitance balance between lines in order to ensure longitudinalbalance. - fixed breakdown voltage in both common and differentialmodes. - the same surge current capability in both commonand differentialmodes. - A particular attention has been given to the internalwire bonding.The"4-point" configuration of TPI12011N ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages.
Technical/Catalog Information | TPI12011N |
Vendor | STMicroelectronics |
Category | Circuit Protection |
Package / Case | 8-SOIC (3.9mm Width) |
Packaging | Tube |
Technology | Mixed Technology |
Applications | ISDN |
Number of Circuits | 1 - Single |
Voltage - Working | 105V |
Voltage - Clamping | 120V |
Power (Watts) | - |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TPI12011N TPI12011N |