TPI12011N

TVS Diode Arrays 120V 1mA Bidirect

product image

TPI12011N Picture
SeekIC No. : 00225810 Detail

TPI12011N: TVS Diode Arrays 120V 1mA Bidirect

floor Price/Ceiling Price

US $ .59~.63 / Piece | Get Latest Price
Part Number:
TPI12011N
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1530
  • 1530~2000
  • 2000~5000
  • 5000~10000
  • Unit Price
  • $.63
  • $.62
  • $.6
  • $.59
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/1

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Polarity : Bidirectional Channels : 4 Channels
Operating Voltage : 105 V Package / Case : SO-8
Capacitance : 150 pF Breakdown Voltage : 120 V
Minimum Operating Temperature : - 55 C Maximum Operating Temperature : + 150 C
Series : TPI Packaging : Tube    

Description

Clamping Voltage :
Channels : 4 Channels
Minimum Operating Temperature : - 55 C
Polarity : Bidirectional
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : SO-8
Capacitance : 150 pF
Series : TPI
Operating Voltage : 105 V
Breakdown Voltage : 120 V


Features:

BIDIRECTIONAL TRIPLE CROWBAR PROTECTION.
PEAK PULSE CURRENT : IPP = 30 A , 10/1000 ms.
BREAKDOWN VOLTAGE: TPI80xxN: 80V TPI120xxN: 120V.
AVAILABLEIN SO8 PACKAGES.
LOWDYNAMICBREAKOVERVOLTAGE: TPI80N : 150V TPI120 : 200V



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
IPP
Peak pulse current (see note 1)
10/1000 ms
5/320 ms
2/10 ms
30
40
90
A
ITSM
Non repetitivesurge peak on-state
current (F = 50 Hz).
tp = 10ms
t =1 s
8
3.5
A
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 55 to + 150
150
°C
TL
Maximum lead temperature for soldering during 10s
260
°C



Description

Dedicated devices for ISDN interface and high speed data telecom line protection. Equivalent to a triple TRISIL with low capacitance. These TPI12011N devices provide : - low capacitance from lines to ground, allowing high speed transmission without signal attenuation. - good capacitance balance between lines in order to ensure longitudinalbalance. - fixed breakdown voltage in both common and differentialmodes. - the same surge current capability in both commonand differentialmodes. - A particular attention has been given to the internalwire bonding.The"4-point" configuration of TPI12011N ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages.




Parameters:

Technical/Catalog InformationTPI12011N
VendorSTMicroelectronics
CategoryCircuit Protection
Package / Case8-SOIC (3.9mm Width)
PackagingTube
TechnologyMixed Technology
ApplicationsISDN
Number of Circuits1 - Single
Voltage - Working105V
Voltage - Clamping120V
Power (Watts)-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPI12011N
TPI12011N



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Test Equipment
Cables, Wires - Management
Optoelectronics
Sensors, Transducers
Cables, Wires
Circuit Protection
View more