Features: SpecificationsDescription The Applications of TPCT4201 are Lemd(Pb)-Free, Smell footprint due tn small and thin package, Low drain-source ON resistance(RSS (ON) =25.5mQ), High forward transfer admittance( IYfsI =15S(typ.), Low leakage current of TPCT4201(ISSS = 10A(max) (Vds= 20 V) ), En...
TPCT4201: Features: SpecificationsDescription The Applications of TPCT4201 are Lemd(Pb)-Free, Smell footprint due tn small and thin package, Low drain-source ON resistance(RSS (ON) =25.5mQ), High forward tran...
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The Applications of TPCT4201 are Lemd(Pb)-Free, Smell footprint due tn small and thin package, Low drain-source ON resistance(RSS (ON) =25.5mQ), High forward transfer admittance( IYfsI =15S(typ.), Low leakage current of TPCT4201(ISSS = 10A(max) (Vds= 20 V) ), Enhancement-mode(Vth =0.5~1.2V (Vss = 10 V, Is = 200A) ), Common drain.VSSS(source-source voltage)=20V, VCSS(gate-source voltage)=±12V, IS(DC, drain current)=6A, ISP(pulse, drain current)=24A, Pd(single-device value at dual operation)=1.7W(drain power dissipation), Pd(single-device value at dual operation)=0.51W(drain power dissipation), EAS(single pulse avalanche energy)=16.8mJ, IAR(avalanche current)=6A, EAR(repetitive avanlanche energy single-device value at dual operation)=0.17mJ,Tch(channel temperature)=150,TSTG( Storage Temperature Range Soldering Temperature)=-55~150, Rth(ch-a)(single-device value at dual operation)=76/W(thermal resistance channel to ambient), Rth(ch-a)(single-device value at dual operation)=244/W(thermal resistance channel to ambient)(note: the power dissipation and thermal resistance values are shown for a single device).