MOSFET MOSFET N-Ch 30V 20A Rdson=0.0095Ohm
TPCM8001-H(TE12L,Q: MOSFET MOSFET N-Ch 30V 20A Rdson=0.0095Ohm
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 20 A |
Resistance Drain-Source RDS (on) : | 0.0095 Ohms | Configuration : | Single Quad Drain Triple Source |
Mounting Style : | SMD/SMT | Package / Case : | TSSOP-ADV |
Packaging : | Reel |
Technical/Catalog Information | TPCM8001-H(TE12L,Q |
Vendor | Toshiba (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 20A |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 1130pF @ 10V |
Power - Max | 30W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 19nC @ 10V |
Package / Case | 8-TSSOP |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TPCM8001 H TE12L,Q TPCM8001HTE12L,Q TPCM8001HTE12LQDKR ND TPCM8001HTE12LQDKRND TPCM8001HTE12LQDKR |