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TPCM8001-H(TE12L,Q

MOSFET MOSFET N-Ch 30V 20A Rdson=0.0095Ohm

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SeekIC No. : 00164353 Detail

TPCM8001-H(TE12L,Q: MOSFET MOSFET N-Ch 30V 20A Rdson=0.0095Ohm

TPCM8001-H(TE12L,Q Data Sheet

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Part Number:
TPCM8001-H(TE12L,Q
Mfg:
Toshiba
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.0095 Ohms Configuration : Single Quad Drain Triple Source
Mounting Style : SMD/SMT Package / Case : TSSOP-ADV
Packaging : Reel    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.0095 Ohms
Package / Case : TSSOP-ADV


Parameters:

Technical/Catalog InformationTPCM8001-H(TE12L,Q
VendorToshiba (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs9.5 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1130pF @ 10V
Power - Max30W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs19nC @ 10V
Package / Case8-TSSOP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPCM8001 H TE12L,Q
TPCM8001HTE12L,Q
TPCM8001HTE12LQDKR ND
TPCM8001HTE12LQDKRND
TPCM8001HTE12LQDKR



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