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TPCF8B01

Features: · Low drain-source ON resistance: RDS (ON) = 72 mÙ (typ.)· High forward transfer admittance: |Yfs| = 4.7 S (typ.)· Low leakage current: IDSS = -10 ìA (max) (VDS = -20 V)· Enhancement-model: Vth = -0.5 to -1.2 V(VDS =-10 V, ID = -200 ìA)· Low forward voltage: VFM = 0.46V(typ.)Speci...

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SeekIC No. : 004526210 Detail

TPCF8B01: Features: · Low drain-source ON resistance: RDS (ON) = 72 mÙ (typ.)· High forward transfer admittance: |Yfs| = 4.7 S (typ.)· Low leakage current: IDSS = -10 ìA (max) (VDS = -20 V)· Enhancemen...

TPCF8B01 Data Sheet

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Part Number:
TPCF8B01
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·  Low drain-source ON resistance: RDS (ON) = 72 mÙ (typ.)
·  High forward transfer admittance: |Yfs| = 4.7 S (typ.)
·  Low leakage current: IDSS = -10 ìA (max) (VDS = -20 V)
·  Enhancement-model: Vth = -0.5 to -1.2 V(VDS =-10 V, ID = -200 ìA)
·  Low forward voltage: VFM = 0.46V(typ.)


Specifications

Characteristics
Symbol
Ratings
Unit
Drain-source voltage
VDSS
-20
V
Drain-gate voltage (RGS-20 k)
VDGR
-20
V
Gate to Source voltage
VGSS
±8
V
Drain current DC                  (Note 1)
ID
-2.7
A
Pulse              (Note 1)
IDP
-10.8
Single pulse avalanche energy (Note 4)
EAS
1.2
mJ
Avalanche current
IAR
-1.35
A
Repetitive avalanche energy
Single-device value at dual operation
                                    (Note 2a, 3b, 5)
EAR
0.11
mJ



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