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TPCF8402

Application`Low drain-source ON resistance : P Channel RDS (ON) = 60 m (typ.)`N Channel RDS (ON) = 38 m (typ.)• High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.)`N Channel |Yfs| = 6.8 S (typ.)• Low leakage current : P Channel IDSS = −10 A (VDS = −30 V)`N Cha...

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SeekIC No. : 004526209 Detail

TPCF8402: Application`Low drain-source ON resistance : P Channel RDS (ON) = 60 m (typ.)`N Channel RDS (ON) = 38 m (typ.)• High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.)`N Channel |Yfs...

TPCF8402 Data Sheet

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Part Number:
TPCF8402
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

`Low drain-source ON resistance
   : P Channel RDS (ON) = 60 m (typ.)
`N Channel RDS (ON) = 38 m (typ.)
• High forward transfer admittance
    : P Channel |Yfs| = 5.9 S (typ.)
`N Channel |Yfs| = 6.8 S (typ.)
• Low leakage current
   : P Channel IDSS = −10 A (VDS = −30 V)
`N Channel IDSS = 10 A (VDS = 30 V)
• Enhancement−mode
   : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA)
`N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDSS -30 30 V
Drain-gate voltage (RGS = 20 k) VDGR -30 30 V
Gate-source voltage VGSS ±20 ±20 V
Drain current DC (Note 1) ID -3.2 4.0 A
Pulse (Note 1) IDP -12.8 16.0
Drain power
dissipation
(t = 5 s)
(Note 2a)		 Single-device operation
(Note 3a)		 PD (1) 1.35 1.35 W
Single-device value at
dual operation(Note 3b)		 PD (2) 1.12 1.12
Drain power
dissipation
(t = 5 s)
(Note 2b)		 Single-device operation
(Note 3a)		 PD (1) 0.53 0.53
Single-device value at
dual operation(Note 3b)		 PD (2) 0.33 0.33
Single pulse avalanche energy(Note 4) EAS 0.67 2.6 mJ
Avalanche current IAR -1.6 2.0 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)		 EAR 0.11 mJ
Channel temperature Tch 150  
Storage temperature range Tstg −55~150  
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.


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