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TPCF8303

PinoutSpecifications Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Drain-gate voltage (RGS = 20 k) VDGR -20 V Gate-source voltage VGSS ±8 V Drain current DC (Note 1) ID -3.0 A Pulse (Note 1) IDP -12 Drain power dissipation(t = 5 s) (Not...

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TPCF8303: PinoutSpecifications Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Drain-gate voltage (RGS = 20 k) VDGR -20 V Gate-source voltage VGSS ±8 V Drain cu...

TPCF8303 Data Sheet

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Part Number:
TPCF8303
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Pinout

Connection Diagram


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDSS -20 V
Drain-gate voltage (RGS = 20 k) VDGR -20 V
Gate-source voltage VGSS ±8 V
Drain current DC (Note 1) ID -3.0 A
Pulse (Note 1) IDP -12
Drain power dissipation
(t = 5 s) (Note 2a)		 Single-device operation (Note 3a) PD (1) 1.35 W
Single-device value at
dual operation (Note 3b)		 PD (2) 1.12
Drain power dissipation
(t = 5 s) (Note 2b)		 Single-device operation(Note 3a)
 PD (1) 0.53
Single-device value at
dual operation (Note 3b)		 PD (2) 0.33
Single pulse avalanche energy (Note 4) EAS 0.58 mJ
Avalanche current IAR -1.5 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)		 EAR 0.11 mJ
Channel temperature Tch 150
Storage temperature range Tstg -55~150

Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6),please refer to the next page.
         This transistor is an electrostatic sensitive device. Please handle with caution.


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