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TPCF8302

Application• Low drain-source ON resistance: RDS (ON) = 44 m (typ.)• High forward transfer admittance: |Yfs| = 6.2 S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)• Enhancement mode: Vth = −0.5 to −1.2 V(VDS = −10 V, ID = −...

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TPCF8302: Application• Low drain-source ON resistance: RDS (ON) = 44 m (typ.)• High forward transfer admittance: |Yfs| = 6.2 S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = &#...

TPCF8302 Data Sheet

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Part Number:
TPCF8302
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Application

• Low drain-source ON resistance: RDS (ON) = 44 m (typ.)
• High forward transfer admittance: |Yfs| = 6.2 S (typ.)
• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.5 to −1.2 V
(VDS = −10 V, ID = −200 A)


Specifications

Characteristic Symbol Value Units
Drain-source voltage VDSS -20 V
Drain-gate voltage (RGS = 20 k) VDGR -20 V
Gate-source voltage VGSS ±10 V
Drain current DC (Note 1) ID -3.0 A
Pulse (Note 1) IDP -12
Drain power
dissipation
(t = 5 s) (Note 2a)		 Single-device operation
(Note 3a)		 PD(1) 1.35 W
Single-device value at
dual operation (Note 3b)		 PD(2) 1.12

Drain power
dissipation
(t = 5 s) (Note 2b)

 Single-device operation
(Note 3a)		 PD(1) 0.53
Single-device value at
dual operation (Note 3b)		 PD(2) 0.33
Single-pulse avalanche energy (Note 4) EAS 0.58 mJ
Avalanche current IAR -1.5 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
 EAR 0.11 mJ
Channel temperature Tch 150
Storage temperature range TSTG - 55 to +150


Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6): See the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling  recautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.




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