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TPCF8301

Features: • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.)• High forward transfer admittance: |Yfs| = 4.7 S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)• Enhancement model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID =...

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TPCF8301: Features: • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.)• High forward transfer admittance: |Yfs| = 4.7 S (typ.)• Low leakage current: IDSS = −10 A (max) (VD...

TPCF8301 Data Sheet

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Part Number:
TPCF8301
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 4.7 S (typ.)
• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)
• Enhancement model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 A)


Pinout

Connection Diagram


Specifications

Parameter Symbol Rating Unit
Collector-base voltage VCBO -20 V
Collector-emitter voltage VCEO -12 V
Emitter-base voltage VEBO -7.5 V
Peak Pulse Current ICM -12 A
Continuous Collector Current (a) IC -4 A
Base current IB -1000 mA
Power Dissipation at TA=25 (a)
Linear Derating Factor		 PD 1.5
12		 W
mW/
Power Dissipation at TA=25 (b)
Linear Derating Factor		 PD 2.45
19.6		 W
mW/
Power Dissipation at TA=25 (d)
Linear Derating Factor		 PD 18 W
mW/
Power Dissipation at TA=25 (e)
Linear Derating Factor		 PD 3
24		 W
mW/
Junction temperature Tj:Tstg -55 to +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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