Position: Home  > All Categories> Integrated Circuits (ICs) > TPCF8201

TPCF8201

Features: • Low drain-source ON resistance: RDS (ON) = 38 m (typ.)• High forward transfer admittance: |Yfs| = 5.4 S (typ.)• Low leakage current: IDSS = 10 A (max) (VDS = 20 V)• Enhancement-model: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 A) Specifications Characteristic...

product image

TPCF8201 Picture
See larger image
SeekIC No. : 004526205 Detail

TPCF8201: Features: • Low drain-source ON resistance: RDS (ON) = 38 m (typ.)• High forward transfer admittance: |Yfs| = 5.4 S (typ.)• Low leakage current: IDSS = 10 A (max) (VDS = 20 V)̶...

TPCF8201 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
TPCF8201
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/11

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Low drain-source ON resistance: RDS (ON) = 38 m (typ.)
• High forward transfer admittance: |Yfs| = 5.4 S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 20 V)
• Enhancement-model: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 A)


Specifications

Characteristic Symbol Rating Unit
Drain-source voltage VDSS 20 V
Drain-gate voltage (RGS=20 k) VDGR 20 V
Gate-source voltage VGSS ±12 V
Drain current DC (Note 1) ID 3 A
Pulsed (Note 1) (Note 3a) IDP 12
Power dissipation (t= 5 s) (Note 2a) Single-device operation PD(1) 1.35 W
Single-device value at
dual operation (Note 3b)		 PD(2) 1.12
Power dissipation (t= 5 s) (Note 2b) Single-device operation (Note 3a) PD(1) 0.53
Single-device value at
dual operation (Note 3b)		 PD(2) 0.33
Single pulse avalanche energy (Note 4) EAS 1.46 mJ
Avalanche current IAR 1.5 A
Repetitive avalanche energy
Single-device value at dual operation (Note 2a, 3b, 5)		 EAR 0.11 mJ
Channel temperature Tch 150
Storage temperature range Tstg -55~150

Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6),please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Line Protection, Backups
BX0023
A20B-1008-0550
Prototyping Products
AVT4168
DE1
Resistors
A101G
3006P-1-205LF
Kits
IT243
UVSC-110-4E1
Optical Inspection Equipment
AA924
A21K4B
View more