MOSFET MOSFET P-Ch 30V 6A
TPCF8104(TE85L,F,M: MOSFET MOSFET P-Ch 30V 6A
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 6 A |
Resistance Drain-Source RDS (on) : | 0.028 Ohms | Configuration : | Single Hex Drain |
Mounting Style : | SMD/SMT | Package / Case : | VS-8 |
Packaging : | Reel |
Technical/Catalog Information | TPCF8104(TE85L,F,M |
Vendor | Toshiba (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 6A |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 3A, 10V |
Input Capacitance (Ciss) @ Vds | 1760pF @ 10V |
Power - Max | 700mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 34nC @ 10V |
Package / Case | VS-8 (2-3U1A) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TPCF8104 TE85L,F,M TPCF8104TE85L,F,M TPCF8104FMDKR ND TPCF8104FMDKRND TPCF8104FMDKR |