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TPCF8103

Features: • Low drain-source ON resistance: RDS (ON) = 72 m (typ.)• High forward transfer admittance: |Yfs| = 4.7S (typ.)• Low leakage current: IDSS = -10 A (max) (VDS = -20 V)• Enhancement-model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200A)PinoutSpecifications C...

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SeekIC No. : 004526203 Detail

TPCF8103: Features: • Low drain-source ON resistance: RDS (ON) = 72 m (typ.)• High forward transfer admittance: |Yfs| = 4.7S (typ.)• Low leakage current: IDSS = -10 A (max) (VDS = -20 V)R...

TPCF8103 Data Sheet

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Part Number:
TPCF8103
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low drain-source ON resistance: RDS (ON) = 72 m (typ.)
• High forward transfer admittance: |Yfs| = 4.7S (typ.)
• Low leakage current: IDSS = -10 A (max) (VDS = -20 V)
• Enhancement-model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200A)


Pinout

Connection Diagram


Specifications

Characteristics
Symbol
Rating
Unit
Avalanche current
VDSS
-20
V
Drain-gate voltage (RGS = 20 k)
VDGR
-20
 V
Gate-source voltage
VGSS
±8
V
Collector current
DC (Note1)
ID
-2.7
A
Pulse (Note1)
IDP
-10.8
forward current
DC
IF
30
A
1 ms
IFP
120
Drain power dissipation (t = 5 s)
(Note 2a)
PD
2.5
W
Drain power dissipation (t = 5 s)
(Note 2b)
PD
0.7
W
Single pulse avalanche energy
(Note3)
EAS
1.2
mJ
Avalanche current
IAR
-1.35
A
Repetitive avalanche energy (Note4)
EAR
0.25
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55 to 150

Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic sensitive device. Please handle with caution.




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