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TPCF8102

Features: • Low drain-source ON resistance: R DS (ON) = 24 m (typ.)• High forward transfer admittance: |Yfs| = 14 S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)• Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −...

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TPCF8102: Features: • Low drain-source ON resistance: R DS (ON) = 24 m (typ.)• High forward transfer admittance: |Yfs| = 14 S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = ...

TPCF8102 Data Sheet

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Part Number:
TPCF8102
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low drain-source ON resistance: R DS (ON) = 24 m (typ.)
• High forward transfer admittance: |Yfs| = 14 S (typ.)
• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 A)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Drain-gate voltage (RGS = 20 k)
VDGR
-20
V
Gate-source voltage
VGSS
±8
V
Drain current
DC (Note 1)
ID
-6
A
Pulse (Note 1)
IDP
-24
Drain power dissipation (t = 5s)
(Note 2a)
PD
2.5
W
Drain power dissipation (t =5 s)
(Note 2a)
PD
0.7
W
Single pulse avalanche energy (Note3)
EAS
5.9
mJ
Avalanche current
IAR
-3
A
Repetitive avalanche energy
(Note 4)
EAR
0.25
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: Note 1, Note 2, Note 3, Note 4 and Note 5:See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..




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