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TPCF8101

Features: `Low drain-source ON resistance: RDS (ON) = 22 m (typ.)`High forward transfer admittance: |Yfs| = 14 S (typ.)`Low leakage current: IDSS = −10 A (max) (VDS = −12 V)`Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 A)Specifications Ch...

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TPCF8101: Features: `Low drain-source ON resistance: RDS (ON) = 22 m (typ.)`High forward transfer admittance: |Yfs| = 14 S (typ.)`Low leakage current: IDSS = −10 A (max) (VDS = −12 V)`Enhancement-...

TPCF8101 Data Sheet

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Part Number:
TPCF8101
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Low drain-source ON resistance: RDS (ON) = 22 m (typ.)
`High forward transfer admittance: |Yfs| = 14 S (typ.)
`Low leakage current: IDSS = −10 A (max) (VDS = −12 V)
`Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 A)


Specifications

Characteristic Symbol Rating Unit
Drain-source voltage VDSS -12 V
Drain-gate voltage (RGS=20 k) VDGR -12 V
Gate-source voltage VGSS ±8 V
Drain current DC (Note 1) ID -6 A
Pulsed (Note 1) IDP -24
Power dissipation (t= 5 s) (Note 2a) PD 2.5 W
Power dissipation (t= 5 s) (Note 2b) PD 0.7 W
Single pulse avalanche energy (Note 3) EAS 6.3 mJ
Avalanche current IAR -3 A
Repetitive avalanche energy (Note 4) EAR 0.25 mJ
Channel temperature Tch 150
Storage temperature range Tstg -55~150



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