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TPCF8001

Application`Low drain-source ON resistance: RDS(ON)= 19 m (typ.)`High forward transfer admittance: |Yfs| = 8 S (typ.)`Low leakage current: IDSS= 10A (max.) (VDS = 30 V)`Enhancement mode: Vth= 1.3 to 2.5 V (VDS= 10 V, ID= 1mA) PinoutSpecifications Characteristic Symbol Rating Unit...

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SeekIC No. : 004526200 Detail

TPCF8001: Application`Low drain-source ON resistance: RDS(ON)= 19 m (typ.)`High forward transfer admittance: |Yfs| = 8 S (typ.)`Low leakage current: IDSS= 10A (max.) (VDS = 30 V)`Enhancement mode: Vth= 1.3 to...

TPCF8001 Data Sheet

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Part Number:
TPCF8001
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Application

`Low drain-source ON resistance: RDS(ON) = 19 m (typ.) 
`High forward transfer admittance: |Yfs| = 8 S (typ.) 
`Low leakage current: IDSS = 10A (max.) (VDS = 30 V) 
`Enhancement mode: Vth= 1.3 to 2.5 V   (VDS = 10 V, ID= 1mA) 



Pinout

Connection Diagram


Specifications

Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS=20k)
Gate-source voltage
VDSS
VDGR
VGSS
30
30
±20
V
V
V
Drain current DC (Note 1)
ID
7
A
Pulse (Note 1)
IDP
28
Drain power dissipation (T=5s)(Note 2a)
Drain power dissipation (T=5s)(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
PD
PD
EAS
IAR
EAR
Tch
Tstg
2.5
0.7
8
3.5
0.25
150
-55~150
W
W
mJ
A
mJ


Note: For Notes 1 to 5, refer to the next page
 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept an Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.




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