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TPC8403

Features: • Low drain-source ON resistance: P Channel R DS (ON) = 45 m (typ.) N Channel R DS (ON) = 25 m (typ.)• High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.) N Channel |Yfs| = 7.8 S (typ.)• Low leakage current: P Channel IDSS = −10 A (VDS = −30 V) ...

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TPC8403: Features: • Low drain-source ON resistance: P Channel R DS (ON) = 45 m (typ.) N Channel R DS (ON) = 25 m (typ.)• High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.) N Channe...

TPC8403 Data Sheet

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Part Number:
TPC8403
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low drain-source ON resistance: P Channel R DS (ON) = 45 m (typ.) N Channel R DS (ON) = 25 m (typ.)
• High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.) N Channel |Yfs| = 7.8 S (typ.)
• Low leakage current: P Channel IDSS = −10 A (VDS = −30 V) N Channel IDSS = 10 A (VDS = 30 V)
• Enhancement mode : P Channel Vth = −1.0~−2.2 V (VDS = −10 V, ID = −1 mA) : N Channel Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)




Specifications

Characteristics
Symbol
Rating
Unit
P Channel N Channel
Drain-source voltage
VDSS
−30
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
−30
30
V
Gate-source voltage
VGSS
±20
±20
V
Drain current
DC (Note 1)
ID
−4.5
6
A
Pulse (Note 1)
IDP
−18
24
Drain power
dissipation
(t = 10 s)
(Note 2a)
Single-device operation
(Note 3a)
PD (1)
1.5
1.5
W
Single-device value at
dual operation(Note 3b)
PD (2)
1.1
1.1
W
Drain power
dissipation
(t = 10 s)
(Note 2b)
Single-device operation
(Note 3a)
PD (1)
0.75
0.75
W
Single-device value at
dual operation(Note 3b)
PD (2)
0.45
0.45
Single pulse avalanche energy (Note 4)
EAS
26.3
(Note 4a)
32.5
(Note 4b)
mJ
Avalanche current
IAR
−4.5
6
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.11
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution.




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