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TPC8401

Features: `Low drain−source ON resistance : P Channel R DS (ON) = 27 m (typ.) N Channel R DS (ON) = 14 m (typ.)`High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 8 S (typ.)`Low leakage current : P Channel IDSS = −10 A (VDS = −30 V) N Channel IDSS =...

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TPC8401: Features: `Low drain−source ON resistance : P Channel R DS (ON) = 27 m (typ.) N Channel R DS (ON) = 14 m (typ.)`High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| ...

TPC8401 Data Sheet

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Part Number:
TPC8401
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Low drain−source ON resistance : P Channel R DS (ON) = 27 m (typ.) N Channel R DS (ON) = 14 m (typ.)
`High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 8 S (typ.)
`Low leakage current : P Channel IDSS = −10 A (VDS = −30 V) N Channel IDSS = 10 A (VDS = 30 V)
`Enhancement−mode : P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 0.8~2.5 V (VDS = 10 V, ID = 1mA)




Specifications

Characteristics
Symbol
Rating
Unit
 P Channel  N Channel
Drain-source voltage
VDSS
−30
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
−30
30
V
Gate-source voltage
VGSS
±20
±20
V
Drain current
DC (Note 1)
ID
−4.5
6
A
Pulse (Note 1)
IDP
−18
24
Drain power
dissipation
(t = 5 s)
(Note 2a)
Single-device operation
(Note 3a)
PD (1)
1.5
1.5
W
Single-device value at
dual operation(Note 3b)
PD (2)
1.0
1.0
W
Drain power
dissipation
(t = 5 s)
(Note 2b)
Single-device operation
(Note 3a)
PD (1)
0.75
0.75
W
Single-device value at
dual operation(Note 3b)
PD (2)
0.45
0.45
Single pulse avalanche energy (Note 4)
EAS
26.3
(Note 4a)
46.8
(Note 4b)
mJ
Avalanche current
IAR
−4.5
6
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the
next page. This transistor is an electrostatic sensitive device. Please handle with caution.




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