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TPC8303

Features: `Low drain−source ON resistance : R DS (ON) = 27 m (typ.)`High forward transfer admittance : |Yfs| = 7 S (typ.)`Low leakage current : IDSS = −10 A (max) (VDS = −30 V)`Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA)Specificat...

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TPC8303: Features: `Low drain−source ON resistance : R DS (ON) = 27 m (typ.)`High forward transfer admittance : |Yfs| = 7 S (typ.)`Low leakage current : IDSS = −10 A (max) (VDS = −30 V)`Enh...

TPC8303 Data Sheet

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Part Number:
TPC8303
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

`Low drain−source ON resistance : R DS (ON) = 27 m (typ.)
`High forward transfer admittance : |Yfs| = 7 S (typ.)
`Low leakage current : IDSS = −10 A (max) (VDS = −30 V)
`Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−30
V
Drain-gate voltage (RGS = 20 k)
VDGR
−30
V
Gate-source voltage VGSS ±20 V
Drain current DC (Note 1) ID −4.5 A
Pulse (Note 1) IDP −18
Drain power
dissipation
(t = 5 s)
(Note 2a)		 Single-device operation
(Note 3a)		 PD (1) 1.5 W
Single-device value at
dual operation(Note 3b)		 PD (2) 1.0 W
Drain power
dissipation
(t = 5 s)
(Note 2b)		 Single-device operation
(Note 3a)		 PD (1) 0.75 W
Single-device value at
dual operation(Note 3b)		 PD (2) 0.45
Single pulse avalanche energy (Note 4) EAS 26 mJ
Avalanche current IAR −4.5 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)		 EAR 0.10 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.




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