Features: `Small footprint due to small and thin package`Low drain−source ON resistance : R DS (ON) = 95 m (typ.)`High forward transfer admittance : |Yfs| = 4 S (typ.)`Low leakage current : IDSS = −10 A (max) (VDS = −30 V)`Enhancement−mode : Vth = −0.8~ −2.0 V (...
TPC8301: Features: `Small footprint due to small and thin package`Low drain−source ON resistance : R DS (ON) = 95 m (typ.)`High forward transfer admittance : |Yfs| = 4 S (typ.)`Low leakage current : ID...
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Characteristics |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDSS |
−30 |
V | |
Drain-gate voltage (RGS = 20 k) |
VDGR |
−30 |
V | |
Gate-source voltage |
VGSS |
±20 |
V | |
Drain current |
DC (Note 1) |
ID |
-3.5 |
A |
Pulse (Note 1) |
IDP |
-14 | ||
Drain power |
Single-device operation |
PD (1) |
1.5 |
W |
Single-device value at |
PD (2) |
1.0 |
W | |
Drain power |
Single-device operation |
PD (1) |
0.75 |
W |
Single-device value at |
PD (2) |
0.45 | ||
Single pulse avalanche energy (Note 4) |
EAS |
16 |
mJ | |
Avalanche current |
IAR |
-3.5 |
A | |
Repetitive avalanche energy |
EAR |
0.10 |
mJ | |
Channel temperature |
Tch |
150 |
°C | |
Storage temperature range |
Tstg |
−55~150 |
°C |
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.