TPC8211 Selling Leads, Price trend, TPC8211 DataSheet download, circuit diagram from SeekIC.com

Features: `Low drain−source ON resistance: R DS (ON) = 25 m (typ.)`High forward transfer admittance: |Yfs| = 7.0 S (typ.)`Low leakage current: IDSS = 10 A (max) (VDS = 30 V)`Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol R...

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SeekIC No. : 004526173 Detail

TPC8211: Features: `Low drain−source ON resistance: R DS (ON) = 25 m (typ.)`High forward transfer admittance: |Yfs| = 7.0 S (typ.)`Low leakage current: IDSS = 10 A (max) (VDS = 30 V)`Enhancement−...

TPC8211 Data Sheet

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Part Number:: TPC8211
Supply Ability:: 5000

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Upload time: 2025/1/11

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Product Details

Description

Features:

`Low drain−source ON resistance: R_{DS (ON)} = 25 m (typ.)
`High forward transfer admittance: |Yfs| = 7.0 S (typ.)
`Low leakage current: I_DSS= 10 A (max) (V_DS = 30 V)
`Enhancement−mode: V_th= 1.3 to 2.5 V (V_DS = 10 V, I_D = 1 mA)

Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	30	V
Gate-source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	_ID	5.5	A
Drain current	Pulse (Note 1)	I_DP	22	A
Drain power dissipation (t = 10 s) (Note 2a)	Single-device operation (Note 3a)	P_D (1)	1.5	W
Drain power dissipation (t = 10 s) (Note 2a)	Single-device value at dual operation(Note 3b)	P_D (2)	1.1	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device operation (Note 3a)	P_D (1)	0.75	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device value at dual operation(Note 3b)	P_D (2)	0.45	W
Single pulse avalanche energy (Note 4)		E_AS	39.3	mJ
Avalanche current		I_AR	5.5	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.1	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution.

TPC8211

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