TPC8210 Selling Leads, Price trend, TPC8210 DataSheet download, circuit diagram from SeekIC.com

Features: `Low drain−source ON resistance: R DS (ON) = 11 m (typ.)`High forward transfer admittance: |Yfs| = 13 S (typ.)`Low leakage current: IDSS = 10 A (max) (VDS = 30 V)`Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol Ra...

See larger image

SeekIC No. : 004526172 Detail

TPC8210: Features: `Low drain−source ON resistance: R DS (ON) = 11 m (typ.)`High forward transfer admittance: |Yfs| = 13 S (typ.)`Low leakage current: IDSS = 10 A (max) (VDS = 30 V)`Enhancement−m...

TPC8210 Data Sheet

Get Latest Price

Part Number:: TPC8210
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2025/1/11

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Product Details

Description

Features:

`Low drain−source ON resistance: R_{DS (ON)} = 11 m (typ.)
`High forward transfer admittance: |Yfs| = 13 S (typ.)
`Low leakage current: I_DSS = 10 A (max) (V_DS = 30 V)
`Enhancement−mode: V_th= 1.3 to 2.5 V (V_DS = 10 V, I_D = 1 mA)

Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	30	V
Gate-source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	_ID	8	A
Drain current	Pulse (Note 1)	I_DP	32	A
Drain power dissipation (t = 10 s) (Note 2a)	Single-device operation (Note 3a)	P_D (1)	1.5	W
Drain power dissipation (t = 10 s) (Note 2a)	Single-device value at dual operation(Note 3b)	P_D (2)	1.1	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device operation (Note 3a)	P_D (1)	0.75	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device value at dual operation(Note 3b)	P_D (2)	0.45	W
Single pulse avalanche energy (Note 4)		E_AS	83.2	mJ
Avalanche current		I_AR	8	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.1	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution.

TPC8210

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Audio Products(940)

Transformers(1503)

Computers, Office - Components, Accessories(4539)

Undefined Category(248)

Tools(7611)

Discrete Semiconductor Products(7459)