TPC8203

Features: `Small footprint due to small and thin package`Low drain-source ON resistance: R DS (ON) =14 m (typ.)`High forward transfer admittance: |Yfs| =8S (typ.)`Low leakage current: IDSS = 10 A (max) (VDS = 30V)`Enhancement-mode: Vth = 0.8~2.5V(VDS = 10 V, ID =1 mA)Specifications Characte...

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SeekIC No. : 004526166 Detail

TPC8203: Features: `Small footprint due to small and thin package`Low drain-source ON resistance: R DS (ON) =14 m (typ.)`High forward transfer admittance: |Yfs| =8S (typ.)`Low leakage current: IDSS = 10 A (m...

floor Price/Ceiling Price

Part Number:
TPC8203
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

`Small footprint due to small and thin package
`Low drain-source ON resistance: R DS (ON) = 14 m (typ.)
`High forward transfer admittance: |Yfs| =8S (typ.)
`Low leakage current: IDSS = 10 A (max) (VDS = 30V)
`Enhancement-mode: Vth = 0.8~2.5V(VDS = 10 V, ID =1 mA)



Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
30
V

Gate-source voltage

VGSS

±20

V

Drain current

DC (Note 1)

ID

6

A

Pulse (Note 1)

IDP

24

Drain power
dissipation
(t = 10 s)
(Note 2a)

Single-device operation
(Note 3a)

PD (1)

1.5

W

Single-device value at
dual operation(Note 3b)

PD (2)

1.0

W

Drain power
dissipation
(t = 10 s)
(Note 2b)

Single-device operation
(Note 3a)

PD (1)

0.75

W

Single-device value at
dual operation(Note 3b)

PD (2)

0.45

Single pulse avalanche energy (Note 4)

EAS

46.8

mJ

Avalanche current

IAR

6

A

Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)

EAR

0.10

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution.




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