TPC8201

Features: `Low drain−source ON resistance : R DS (ON) = 37 m (typ.)`High forward transfer admittance : |Yfs| = 6 S (typ.)`Low leakage current : IDSS = 10 A (max) (VDS = 30 V)`Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol Ra...

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SeekIC No. : 004526164 Detail

TPC8201: Features: `Low drain−source ON resistance : R DS (ON) = 37 m (typ.)`High forward transfer admittance : |Yfs| = 6 S (typ.)`Low leakage current : IDSS = 10 A (max) (VDS = 30 V)`Enhancement−...

floor Price/Ceiling Price

Part Number:
TPC8201
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

`Low drain−source ON resistance : R DS (ON) = 37 m (typ.)
`High forward transfer admittance : |Yfs| = 6 S (typ.)
`Low leakage current : IDSS = 10 A (max) (VDS = 30 V)
`Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)



Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
30
V

Gate-source voltage

VGSS

±20

V

Drain current

DC (Note 1)

ID

5

A

Pulse (Note 1)

IDP

20

Drain power
dissipation
(t = 10 s)
(Note 2a)

Single-device operation
(Note 3a)

PD (1)

1.5

W

Single-device value at
dual operation(Note 3b)

PD (2)

1.1

W

Drain power
dissipation
(t = 10 s)
(Note 2b)

Single-device operation
(Note 3a)

PD (1)

0.75

W

Single-device value at
dual operation(Note 3b)

PD (2)

0.45

Single pulse avalanche energy (Note 4)

EAS

32.5

mJ

Avalanche current

IAR

5

A

Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)

EAR

0.1

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.




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