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TPC8111(TE12L,Q,M)

MOSFET MOSFET P-Ch 30V 11A Rdson=0.012Ohm

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SeekIC No. : 00164281 Detail

TPC8111(TE12L,Q,M): MOSFET MOSFET P-Ch 30V 11A Rdson=0.012Ohm

TPC8111(TE12L,Q,M) Data Sheet

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Part Number:
TPC8111(TE12L,Q,M)
Mfg:
Toshiba
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : - 11 A
Resistance Drain-Source RDS (on) : 0.012 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOP-8 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Resistance Drain-Source RDS (on) : 0.012 Ohms
Continuous Drain Current : - 11 A
Package / Case : SOP-8


Parameters:

Technical/Catalog InformationTPC8111(TE12L,Q,M)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs12 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds 5710pF @ 10V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs107nC @ 10V
Package / Case2-6J1B
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPC8111 TE12L,Q,M
TPC8111TE12L,Q,M



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