Features: • Small footprint due to small and thin package• Low drain-source ON resistance: R DS (ON) = 8 .1m (typ.)• High forward transfer admittance: |Yfs| = 23 S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = −30 V)• Enhancement-mode: Vth = ͨ...
TPC8111: Features: • Small footprint due to small and thin package• Low drain-source ON resistance: R DS (ON) = 8 .1m (typ.)• High forward transfer admittance: |Yfs| = 23 S (typ.)• Lo...
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TVS Diodes - Transient Voltage Suppressors 1.5KW 8.2V 5% Unidir
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TVS Diodes - Transient Voltage Suppressors 1.5KW 8.2V 5% Unidir
Characteristics |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDSS |
−30 |
V | |
Drain-gate voltage (RGS = 20 k) |
VDGR |
-30 |
V | |
Gate-source voltage |
VGSS |
±20 |
V | |
Drain current |
DC (Note 1) |
ID |
−11 |
A |
Pulse (Note 1) |
IDP |
-44 | ||
Drain power dissipation (t = 5 s) (Note 2a) |
PD |
1.9 |
W | |
Drain power dissipation (t = 10 s) (Note 2a) |
PD |
1.0 |
W | |
Single pulse avalanche energy (Note3) |
EAS |
31.5 |
mJ | |
Avalanche current |
IAR |
-11 |
A | |
Repetitive avalanche energy (Note 4) |
EAR |
0.19 |
mJ | |
Channel temperature |
Tch |
150 |
°C | |
Storage temperature range |
Tstg |
−55~150 |
°C |
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.