TPC8111

Features: • Small footprint due to small and thin package• Low drain-source ON resistance: R DS (ON) = 8 .1m (typ.)• High forward transfer admittance: |Yfs| = 23 S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = −30 V)• Enhancement-mode: Vth = ͨ...

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SeekIC No. : 004526161 Detail

TPC8111: Features: • Small footprint due to small and thin package• Low drain-source ON resistance: R DS (ON) = 8 .1m (typ.)• High forward transfer admittance: |Yfs| = 23 S (typ.)• Lo...

floor Price/Ceiling Price

Part Number:
TPC8111
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Description



Features:

• Small footprint due to small and thin package
• Low drain-source ON resistance: R DS (ON) = 8 .1m (typ.)
• High forward transfer admittance: |Yfs| = 23 S (typ.)
• Low leakage current: IDSS = −10 A (max) (VDS = −30 V)
• Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)



Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−30
V
Drain-gate voltage (RGS = 20 k)
VDGR
-30
V
Gate-source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
−11
A
Pulse (Note 1)
IDP
-44
Drain power dissipation (t = 5 s)
(Note 2a)
PD
1.9
W
Drain power dissipation (t = 10 s)
(Note 2a)
PD
1.0
W
Single pulse avalanche energy (Note3)
EAS
31.5
mJ
Avalanche current
IAR
-11
A
Repetitive avalanche energy
(Note 4)
EAR
0.19
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.




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