TPC8106−H Selling Leads, Price trend, TPC8106−H DataSheet download, circuit diagram from SeekIC.com

Features: `Small footprint due to small and thin package`High speed switching`Small gate charge : Qg = 52 nC (typ.)`Low drain−source ON resistance : R DS (ON) = 14 m (typ.)`High forward transfer admittance : |Yfs| = 16.6 S (typ.)`Low leakage current : IDSS = −10 A (max) (VDS = −3...

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SeekIC No. : 004526156 Detail

TPC8106−H: Features: `Small footprint due to small and thin package`High speed switching`Small gate charge : Qg = 52 nC (typ.)`Low drain−source ON resistance : R DS (ON) = 14 m (typ.)`High forward transf...

TPC8106−H Data Sheet

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Part Number:: TPC8106−H
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/1/11

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TPC8.2A-E3/86A evaluate
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US $.24 - .24 / Piece

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US $.38 - .46 / Piece

TVS Diodes - Transient Voltage Suppressors 1.5KW 8.2V 5% Unidir

Product Details

Description

Features:

`Small footprint due to small and thin package
`High speed switching
`Small gate charge : Qg = 52 nC (typ.)
`Low drain−source ON resistance : R _{DS (ON)} = 14 m (typ.)
`High forward transfer admittance : |Yfs| = 16.6 S (typ.)
`Low leakage current : I_DSS = −10 A (max) (V_DS= −30 V)
`Enhancement−mode : V_th = −0.8~ −2.0 V (V_DS =− 10 V, I_D= −1 mA)

Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	-30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	-30	V
Gate-source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	_ID	-10	A
Drain current	Pulse (Note 1)	I_DP	-40	A
Drain power dissipation (t = 5 s) (Note 2a)		P_D	2.4	W
Drain power dissipation (t = 10 s) (Note 2a)		P_D	1.0	W
Single pulse avalanche energy (Note3)		E_AS	130	mJ
Avalanche current		I_AR	-10	A
Repetitive avalanche energy (Note 4)		E_AR	0.24	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: Note 1, Note 2, Note 3, Note 4 See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..

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TPC8106−H

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