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TPC8104−H

Features: `Small footprint due to small and thin package`High speed switching`Small gate charge : Qg = 17 nC (typ.)`Low drain−source ON resistance : R DS (ON) = 38 m (typ.)`High forward transfer admittance : |Yfs| = 7.0 S (typ.)`Low leakage current : IDSS = −10 A (max) (VDS = −30...

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TPC8104−H: Features: `Small footprint due to small and thin package`High speed switching`Small gate charge : Qg = 17 nC (typ.)`Low drain−source ON resistance : R DS (ON) = 38 m (typ.)`High forward transf...

TPC8104−H Data Sheet

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Part Number:
TPC8104−H
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

`Small footprint due to small and thin package
`High speed switching
`Small gate charge : Qg = 17 nC (typ.)
`Low drain−source ON resistance : R DS (ON) = 38 m (typ.)
`High forward transfer admittance : |Yfs| = 7.0 S (typ.)
`Low leakage current : IDSS = −10 A (max) (VDS = −30 V)
`Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−30
V
Drain-gate voltage (RGS = 20 k)
VDGR
-30
V
Gate-source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
−5
A
Pulse (Note 1)
IDP
-20
Drain power dissipation (t = 5 s)
(Note 2a)
PD
2.4
W
Drain power dissipation (t = 10 s)
(Note 2a)
PD
1.0
W
Single pulse avalanche energy (Note3)
EAS
32.5
mJ
Avalanche current
IAR
−5
A
Repetitive avalanche energy
(Note 4)
EAR
0.24
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..




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