TPC8035-H(TE12L,QM

MOSFET MOSFET N-Ch 30V 18A

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TPC8035-H(TE12L,QM Picture
SeekIC No. : 00158057 Detail

TPC8035-H(TE12L,QM: MOSFET MOSFET N-Ch 30V 18A

floor Price/Ceiling Price

US $ .47~.47 / Piece | Get Latest Price
Part Number:
TPC8035-H(TE12L,QM
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 0~2210
  • 2210~3000
  • Unit Price
  • $.47
  • $.47
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.0032 Ohms Configuration : Single Quad Drain Triple Source
Mounting Style : SMD/SMT Package / Case : SOP-8
Packaging : Reel    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.0032 Ohms
Package / Case : SOP-8


Parameters:

Technical/Catalog InformationTPC8035-H(TE12L,QM
VendorToshiba (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs3.2 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 7800pF @ 10V
Power - Max1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs82nC @ 10V
Package / Case2-6J1B
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPC8035 H TE12L,QM
TPC8035HTE12L,QM
TPC8035 HTE12LQMDKR ND
TPC8035HTE12LQMDKRND
TPC8035-HTE12LQMDKR



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