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TPC8022-H(TE12LQ,M: MOSFET MOSFET N-Ch V A Rdson=Ohm

TPC8022-H(TE12LQ,M Data Sheet

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Part Number:: TPC8022-H(TE12LQ,M
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2024/11/1

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	40 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	7.5 A
Resistance Drain-Source RDS (on) :	0.027 Ohms	Configuration :	Single Quad Drain Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOP-8	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 7.5 A
Resistance Drain-Source RDS (on) : 0.027 Ohms
Package / Case : SOP-8

Parameters:

Technical/Catalog Information	TPC8022-H(TE12LQ,M
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	7.5A
Rds On (Max) @ Id, Vgs	27 mOhm @ 3.8A, 10V
Input Capacitance (Ciss) @ Vds	650pF @ 10V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	11nC @ 10V
Package / Case	2-6J1B
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPC8022 H TE12LQ,M TPC8022HTE12LQ,M

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