Features: SpecificationsDescription TPC8020-H is a kind of TOSHIBA field effect transistor which is silicon N-channel MOS type and TPC8020-H has three ways of applications which is as follows: The first one is high-speed and high-efficiency DC-DC converter. The second one is notebook PC . The thir...
TPC8020-H: Features: SpecificationsDescription TPC8020-H is a kind of TOSHIBA field effect transistor which is silicon N-channel MOS type and TPC8020-H has three ways of applications which is as follows: The f...
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TPC8020-H is a kind of TOSHIBA field effect transistor which is silicon N-channel MOS type and TPC8020-H has three ways of applications which is as follows: The first one is high-speed and high-efficiency DC-DC converter. The second one is notebook PC . The third one is portable equipment . At the same time, it also has seven unique features: The first one is small footprint due to small and thin package. The second one is high-speed switching. The third one is small gate charge which is 23 nC typ. The forth one is low drain-source ON resistance which is 6.8 m typ. The fifth one is high forward transfer admittance which is 32 S typ. The sixth one is low leakage current which is 10 A max when VDS is 30 V. The seventh one is enchancement mode that Vth is from 1.1 V to 2.3 V when VDS is 10 V and ID is 1 mA.
There are some maximum ratings of TPC8020-H under the condition that Ta is 25. Drain-source voltage (VDSS) is 30 V . Drain-gate voltage (VDGR) is 30 V when RGS is 20 K.Gate-source voltage(VGSS) is ±20 V. Drain current(DC)(ID) is 13 A. Drain current(pulse) (IDP) is 52A. Drain power dissipation( t is 10 s) (PD) is 1.0W. Single pulse avalanche energy (EAS) is 110 mJ. Channel temperature(Tch) is 150. Storage temperature range (Tstg) is -55 to 150. Besides, there are also some thermal characteristics about it. Thermal resistance, channel to ambient(t is 10 s) (Rth(ch-a)) is 65.8/W. Thermal resistance , channel to ambient(t is 10 s) (Rth(ch-a) ) is 125/W.There are also some electrical characteristics (Ta is 25) you will want to know about it. Gate leakage current (IGSS) is ±10A max when VGS is ±16V and VDS is 0. Drain cut-OFF current (IDSS)(VDS = 30 V, V GS = 0 V) is 10 A max. Drain-source breakdown voltage(V(BR) DSS)(ID = 10 mA, VGS = 0 V) is 30 V min.Drain-source breakdown voltage((BR) DSX)(ID = 10 mA, VGS = -20 V) is 15 V min.Gate threshold voltage(Vth)(VDS = 10 V, ID = 1 mA) is 1.1 V min and 2.3 V max.Drain-source ON resistance (RDS (ON) )(VGS = 4.5 V , ID = 6.5) is 9.5 m typ and 13m max..Drain-source ON resistance (RDS (ON) )(VGS = 10 V, ID = 6.5 A) is 6.8 m typ and 9 m max.Forward transfer admittance (|Yf s|)(VDS = 10 V, ID = 6.5 A ) is 16 S min and 32 S max. Input capacitance (Ciss)(VDS = 10 V, VGS = 0 V, f = 1 MHz) is 1395 pF.Reverse transfer capacitance (Crss)(VDS = 10 V, VGS = 0 V, f = 1 MHz) is 140 pF typ. Output capacitance(Coss)(VDS = 10 V, VGS = 0 V, f = 1 MHz) is 525 pF .
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