TPC8020-H

Features: SpecificationsDescription TPC8020-H is a kind of TOSHIBA field effect transistor which is silicon N-channel MOS type and TPC8020-H has three ways of applications which is as follows: The first one is high-speed and high-efficiency DC-DC converter. The second one is notebook PC . The thir...

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SeekIC No. : 004526151 Detail

TPC8020-H: Features: SpecificationsDescription TPC8020-H is a kind of TOSHIBA field effect transistor which is silicon N-channel MOS type and TPC8020-H has three ways of applications which is as follows: The f...

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Part Number:
TPC8020-H
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Description



Features:






Specifications






Description

      TPC8020-H is a kind of TOSHIBA field effect transistor which is silicon N-channel MOS type and TPC8020-H has three ways of applications which is as follows: The first one is high-speed and high-efficiency DC-DC converter. The second one is notebook PC . The third one is portable equipment . At the same time, it also has seven unique features: The first one is small footprint due to small and thin package. The second one is high-speed switching. The third one is small gate charge which is 23 nC typ. The forth one is low drain-source ON resistance which is 6.8 m typ. The fifth one is high forward transfer admittance which is 32 S typ. The sixth one is low leakage current which is 10 A max when VDS is 30 V. The seventh one is enchancement mode that Vth is from 1.1 V to 2.3 V when VDS is 10 V and ID is 1 mA.
     There are some maximum ratings of TPC8020-H under the condition that Ta is 25. Drain-source voltage (VDSS) is 30 V . Drain-gate voltage (VDGR) is 30 V when RGS is 20 K.Gate-source voltage(VGSS) is ±20 V. Drain current(DC)(ID) is 13 A. Drain current(pulse) (IDP) is 52A. Drain power dissipation( t is 10 s) (PD) is 1.0W. Single pulse avalanche energy (EAS) is 110 mJ. Channel temperature(Tch) is 150. Storage temperature range (Tstg) is -55 to 150. Besides, there are also some thermal characteristics about it. Thermal resistance, channel to ambient(t is 10 s) (Rth(ch-a)) is 65.8/W. Thermal resistance , channel to ambient(t is 10 s) (Rth(ch-a) ) is 125/W.There are also some electrical characteristics (Ta is 25) you will want to know about it. Gate leakage current (IGSS) is ±10A max when VGS is ±16V and VDS is 0. Drain cut-OFF current (IDSS)(VDS = 30 V, V GS = 0 V) is   10 A max. Drain-source breakdown voltage(V(BR) DSS)(ID = 10 mA, VGS = 0 V) is 30 V min.Drain-source breakdown voltage((BR) DSX)(ID = 10 mA, VGS = -20 V) is 15 V min.Gate threshold voltage(Vth)(VDS = 10 V, ID = 1 mA) is 1.1 V min and 2.3 V max.Drain-source ON resistance (RDS (ON) )(VGS = 4.5 V , ID = 6.5) is 9.5 m typ and 13m max..Drain-source ON resistance (RDS (ON) )(VGS = 10 V, ID = 6.5 A) is 6.8 m typ and 9 m max.Forward transfer admittance (|Yf s|)(VDS = 10 V, ID = 6.5 A ) is 16 S min and 32 S max. Input capacitance (Ciss)(VDS = 10 V, VGS = 0 V, f = 1 MHz) is 1395 pF.Reverse transfer capacitance (Crss)(VDS = 10 V, VGS = 0 V, f = 1 MHz) is  140 pF typ. Output capacitance(Coss)(VDS = 10 V, VGS = 0 V, f = 1 MHz) is 525 pF .
      In a word , this is just a simple introduction of TPC8020-H, and if you are interested in it or you want to know detailed information about it, please come to know more about our web. Thanks for your concern of our infomation!

 

 






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