TPC8018-H(TE12LQM) Selling Leads, Price trend , Toshiba, TPC8018-H(TE12LQM) DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00164127 Detail

TPC8018-H(TE12LQM): MOSFET MOSFET N-Ch 30V 18A

TPC8018-H(TE12LQM) Data Sheet

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Part Number:: TPC8018-H(TE12LQM)
Mfg:: Toshiba
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	18 A
Resistance Drain-Source RDS (on) :	0.0046 Ohms	Configuration :	Single Quad Drain Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOP-8	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.0046 Ohms
Package / Case : SOP-8

Parameters:

Technical/Catalog Information	TPC8018-H(TE12LQM)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	4.6 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds	2265pF @ 10V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	2-6J1B
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPC8018 H TE12LQM TPC8018HTE12LQM

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TPC8018-H(TE12LQM)

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