TPC8018-H(TE12L)

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Gate Charge (Qg) @ Vgs: 38nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 18A
Power - Max: -
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Manufacturer: Toshiba
Supplier Device Package: 8-SOP (5.5x6.0)
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds: 2265pF @ 10V


Parameters:

Technical/Catalog Information	TPC8018-H(TE12L)
Vendor	Toshiba (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	4.6 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds	2265pF @ 10V
Power - Max	1W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	8-SOP
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	TPC8018 H TE12L TPC8018HTE12L TPC8018 HCT ND TPC8018HCTND TPC8018-HCT