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TPC8017-H

Application• Small footprint due to small and thin package• High speed switching• Small gate charge: Qg = 25 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.)• High forward transfer admittance: |Yfs| =38 S (typ.)• Low leakage current: IDSS = 10 ...

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SeekIC No. : 004526150 Detail

TPC8017-H: Application• Small footprint due to small and thin package• High speed switching• Small gate charge: Qg = 25 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 5.1 m (typ....

TPC8017-H Data Sheet

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Part Number:
TPC8017-H
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg = 25 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.)
• High forward transfer admittance: |Yfs| =38 S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDSS 30 V
Drain-gate voltage (RGS = 20 k) VDGR 30 V
Gate-source voltage VGSS ±20 V
Drain current DC         (Note 1) ID 15 V
Pulsed   (Note 1) IDP 60
Drain power dissipation (t = 10 s)
                                      (Note 2a)		 PD 1.9 W
Drain power dissipation (t = 10 s)
                                      (Note 2b)		 PD 1.0 W
Single pulse avalanche energy
                                      (Note 3)		 EAS 146 mJ
Avalanche current IAR 15 A
Repetitive avalanche energy
                           (Note 2a) (Note 4)		 EAR 0.19 mJ
Channel temperature Tch 150
Storage temperature range Tstg −55 to 150
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.


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