TPC8016-H Selling Leads, Price trend, TPC8016-H DataSheet download, circuit diagram from SeekIC.com

Features: ` Small footprint due to small and thin package` High speed switching` Small gate charge: Qg = 48 nc (typ.)` Low drain-source ON resistance: R DS (ON) = 3.7 mO (typ.)` High forward transfer admittance: |Yfs| = 25 S (typ.)` Low leakage current: IDSS = 10 A (max) (VDS = 30 V)` Enhancement-...

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TPC8016-H: Features: ` Small footprint due to small and thin package` High speed switching` Small gate charge: Qg = 48 nc (typ.)` Low drain-source ON resistance: R DS (ON) = 3.7 mO (typ.)` High forward transfe...

TPC8016-H Data Sheet

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Part Number:: TPC8016-H
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/1/11

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US $.24 - .24 / Piece

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US $.38 - .46 / Piece

TVS Diodes - Transient Voltage Suppressors 1.5KW 8.2V 5% Unidir

Product Details

Description

Features:

` Small footprint due to small and thin package
` High speed switching
` Small gate charge: Qg = 48 nc (typ.)
` Low drain-source ON resistance: R _{DS (ON)} = 3.7 mO (typ.)
` High forward transfer admittance: |Yfs| = 25 S (typ.)
` Low leakage current: I_DSS = 10 A (max) (V_DS = 30 V)
` Enhancement-mode: V _th= 1.1 to 2.3 V (V _DS = 10 V, I_D = 1 mA)

Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	30	V
Gate-source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	_ID	15	A
Drain current	Pulse (Note 1)	I_DP	60	A
Drain power dissipation (t = 5 s) (Note 2a)		P_D	1.9	W
Drain power dissipation (t = 10 s) (Note 2a)		P_D	1.0	W
Single pulse avalanche energy (Note3)		E_AS	146	mJ
Avalanche current		I_AR	15	A
Repetitive avalanche energy (Note 4)		E_AR	0.19	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..

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TPC8016-H

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