TPC8014

Features: `Small footprint due to small and thin package`Low drain-source ON resistance: R DS (ON) =11 m (typ.)`High forward transfer admittance: |Yfs| =10 S (typ.)`Low leakage current: IDSS = 10 A (max) (VDS = 30 V)`Enhancement-mode: Vth = 1.3 to 2.5V (VDS = 10 V, ID =1 mA)Specifications C...

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SeekIC No. : 004526148 Detail

TPC8014: Features: `Small footprint due to small and thin package`Low drain-source ON resistance: R DS (ON) =11 m (typ.)`High forward transfer admittance: |Yfs| =10 S (typ.)`Low leakage current: IDSS = 10 A ...

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Part Number:
TPC8014
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/5

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Product Details

Description



Features:

`Small footprint due to small and thin package
`Low drain-source ON resistance: R DS (ON) =11 m (typ.)
`High forward transfer admittance: |Yfs| =10 S (typ.)
`Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
`Enhancement-mode: Vth = 1.3 to 2.5V (VDS = 10 V, ID =1 mA)





Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
11
A
Pulse (Note 1)
IDP
44
Drain power dissipation (t = 5 s)
(Note 2a)
PD
1.9
W
Drain power dissipation (t = 10 s)
(Note 2a)
PD
1.0
W
Single pulse avalanche energy (Note3)
EAS
157
mJ
Avalanche current
IAR
11
A
Repetitive avalanche energy
(Note 4)
EAR
0.19
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: Note 1, Note 2, Note 3, Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..






Description

The TPC8014 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications.

The feature of the TPC8014 are:(1)Small footprint due to small and thin package ; (2)Low drain-source ON resistance: RDS (ON) = 11 m? (typ.) ; (3)High forward transfer admittance: |Yfs| = 10 S (typ.) ; (4)Low leakage current: IDSS = 10 A (max) (VDS = 30 V) ; (5)Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA).

The absolute maximum ratings of the TPC8014 can be summarized as:(1)drain-source voltage:30V; (2)drain-gate voltage(RGS=20k):30V; (3)gate-source voltage:±20V; (4)drain curren DC:11A; (5)drain curren Pulse:44A; (6)single puse avalanche energy:157mj; (7)avalanche current:11A; (8)channel tempeature:150; (9)storage temperature range:-55~150.

The electrical characteristics at TA=25°C of the TPC8014 can be summarized as:(1)gate leakage current:±10A; (2)drain cut-off current:10A; (3)drain-source breakdown voltage:30V; (4)gate threshold voltage:1.3V MIN 2.5V MAX; (5)input capacitance:1860pF.If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .






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