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TPC8013-H

Features: ·Small footprint due to small and thin package·High speed switching·Small gate charge: Qg = 48 nc (typ.)·Low drain-source ON resistance: RDS (ON) = 5.4 mΩ (typ.)·High forward transfer admittance: |Yfs| = 25 S (typ.)·Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)·Enhance...

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SeekIC No. : 004526147 Detail

TPC8013-H: Features: ·Small footprint due to small and thin package·High speed switching·Small gate charge: Qg = 48 nc (typ.)·Low drain-source ON resistance: RDS (ON) = 5.4 mΩ (typ.)·High forward transfe...

TPC8013-H Data Sheet

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Part Number:
TPC8013-H
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Small footprint due to small and thin package
·High speed switching
·Small gate charge: Qg = 48 nc (typ.)
·Low drain-source ON resistance: RDS (ON) = 5.4 mΩ (typ.)
·High forward transfer admittance: |Yfs| = 25 S (typ.)
·Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
·Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)


Pinout

Connection Diagram


Specifications

Parameter Symbol Rating Unit
Drain-source voltage VDSS 30 V
Drain-gate voltage (RGS =20 k) VDGR 30 V
Gate-source voltage VGSS ±20 V
Drain current DC (Note 1) ID 15 A
Pulse (Note 1) IDP 60 A
Drain power dissipation (t = 10 s)
(Note 2a)		 PD 1.9 W
Drain power dissipation (t = 10 s)
(Note 2b)		 PD 1.0 W
Single pulse avalanche energy
(Note 3)		 EAS 146 mJ
Avalanche current IAR 15 A
Repetitive avalanche energy
(Note 2a) (Note 4)		 EAR 0.19 mJ
Channel temperature Tch 150
Storage temperature range Tstg -55 to +150
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page.


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