TPC8010-H Selling Leads, Price trend, TPC8010-H DataSheet download, circuit diagram from SeekIC.com

Features: ·Small footprint due to small and thin package·High speed switching·Small gate charge: Qg = 18 nC (typ.)·Low drain-source ON resistance: RDS (ON) = 12 mΩ (typ.)·High forward transfer admittance: |Yfs| = 11 S (typ.)·Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)·Enhancem...

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SeekIC No. : 004526145 Detail

TPC8010-H: Features: ·Small footprint due to small and thin package·High speed switching·Small gate charge: Qg = 18 nC (typ.)·Low drain-source ON resistance: RDS (ON) = 12 mΩ (typ.)·High forward transfer...

TPC8010-H Data Sheet

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Part Number:: TPC8010-H
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/1/11

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Product Details

Description

Features:

·Small footprint due to small and thin package
·High speed switching
·Small gate charge: Qg = 18 nC (typ.)
·Low drain-source ON resistance: R_DS (ON) = 12 mΩ (typ.)
·High forward transfer admittance: |Y_fs| = 11 S (typ.)
·Low leakage current: I_DSS = 10 µA (max) (V_DS = 30 V)
·Enhancement mode: V_th = 1.1 to 2.3 V (V_DS= 10 V, I_D = 1 mA)

Pinout

Connection Diagram

Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	30	V
Drain-gate voltage (RGS = 20 kΩ)		V_DGR	30	V
Gate-source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	I_D	11	A
Drain current	Pulse (Note 1)	I_DP	44	A
Drain power dissipation (t = 10 s) (Note 2a)		P_D	1.9	W
Drain power dissipation (t = 10 s) (Note 2b)		P_D	1.0	W
Single pulse avalanche energy (Note 3)		E_AS	157	mJ
Avalanche current		I_AR	11	A
Repetitive avalanche energy (Note 2a) (Note 4)		E_AR	0.19	mJ
Channel temperature		T_ch	150	°C
Storage temperature range		T_stg	−55 to 150	°C

Note: For(Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.

TPC8010-H

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