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TPC8009-H

Features: `Small footprint due to small and thin package`High speed switching`Small gate charge: Qg = 29 nC (typ.)`Low drain-source ON resistance: RDS (ON) = 8 m (typ.)`High forward transfer admittance: |Yfs| = 16 S (typ.)`Low leakage current: IDSS = 10 A (max) (VDS = 30 V)`Enhancement mode: Vth =...

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TPC8009-H: Features: `Small footprint due to small and thin package`High speed switching`Small gate charge: Qg = 29 nC (typ.)`Low drain-source ON resistance: RDS (ON) = 8 m (typ.)`High forward transfer admitta...

TPC8009-H Data Sheet

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Part Number:
TPC8009-H
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Features:

`Small footprint due to small and thin package
`High speed switching
`Small gate charge: Qg = 29 nC (typ.)
`Low drain-source ON resistance: RDS (ON) = 8 m (typ.)
`High forward transfer admittance: |Yfs| = 16 S (typ.)
`Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
`Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)


Specifications

Parameter Symbol Rating Unit
Drain to source voltage VDSS 30 V
Drain-gate voltage (RGS = 20 k) VDGR 30 V
Gate to source voltage VGSS ±20 V
Drain current DC (Note 1) ID 13 A
Drain current Pulse (Note 1) IDP 52 A
Drain power dissipation (t = 10 s)
(Note 2a)		 PD 1.9 W
Drain power dissipation (t = 10 s)
(Note 2a)		 PD

1.0

 W
Single pulse avalanche energy
(Note 3)		 EAS 219 mJ
Avalanche current IAR 13 A
Repetitive avalanche energy
(Note 2a) (Note 4)		 EAR 0.19 mJ
Channel temperature Tch 150
Storage temperature Tstg -55 to +150
Note: (Note 1), (Note 2), (Note 3), (Note 4) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution.


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