Position: Home  > All Categories> Integrated Circuits (ICs) > TPC8005−H

TPC8005−H

Features: `Small footprint due to small and thin package`High speed switching : 60% speed up (compare with current type)`Small gate charge : Qg = 20 nC (typ.)`Low drain−source ON resistance : R DS (ON) = 13 m (typ.)`High forward transfer admittance : |Yfs| = 16 S (typ.)`Low leakage current :...

product image

TPC8005−H Picture
See larger image
SeekIC No. : 004526142 Detail

TPC8005−H: Features: `Small footprint due to small and thin package`High speed switching : 60% speed up (compare with current type)`Small gate charge : Qg = 20 nC (typ.)`Low drain−source ON resistance : ...

TPC8005−H Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
TPC8005−H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/11

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`Small footprint due to small and thin package
`High speed switching : 60% speed up (compare with current type)
`Small gate charge : Qg = 20 nC (typ.)
`Low drain−source ON resistance : R DS (ON) = 13 m (typ.)
`High forward transfer admittance : |Yfs| = 16 S (typ.)
`Low leakage current : IDSS = 10 A (max) (VDS = 30 V)
`Enhancement−mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
11
A
Pulse (Note 1)
IDP
44
Drain power dissipation (t = 10s)
(Note 2a)
PD
2.4
W
Drain power dissipation (t = 10 s)
(Note 2a)
PD
1.0
W
Single pulse avalanche energy (Note3)
EAS
157
mJ
Avalanche current
IAR
11
A
Repetitive avalanche energy
(Note 4)
EAR
0.24
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: Note 1, Note 2, Note 3, Note 4 See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Line Protection, Backups
BX0023
A20B-1008-0550
Tools
TCP202
G084SN05 V.3
Cable Assemblies
CS1W-CN114
XW2Z-500T
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Audio Products
HUC1002
WM-64CT
View more