Features: `Small footprint due to small and thin package`Low drain−source ON resistance : R DS (ON) = 5.4 m (typ.)`High forward transfer admittance : |Yfs| = 21 S (typ.)`Low leakage current : IDSS = 10 A (max) (VDS = 30 V)`Enhancement mode : Vth = 0.8~2.5 V (VDS = 10 V, ID = 1 mA)Specificati...
TPC8003: Features: `Small footprint due to small and thin package`Low drain−source ON resistance : R DS (ON) = 5.4 m (typ.)`High forward transfer admittance : |Yfs| = 21 S (typ.)`Low leakage current : ...
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Characteristics |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDSS |
30 |
V | |
Drain-gate voltage (RGS = 20 k) |
VDGR |
30 |
V | |
Gate-source voltage |
VGSS |
±20 |
V | |
Drain current |
DC (Note 1) |
ID |
13 |
A |
Pulse (Note 1) |
IDP |
52 | ||
Drain power dissipation (t = 10s) (Note 2a) |
PD |
2.4 |
W | |
Drain power dissipation (t =10 s) (Note 2a) |
PD |
1.0 |
W | |
Single pulse avalanche energy (Note3) |
EAS |
220 |
mJ | |
Avalanche current |
IAR |
13 |
A | |
Repetitive avalanche energy (Note 4) |
EAR |
0.24 |
mJ | |
Channel temperature |
Tch |
150 |
°C | |
Storage temperature range |
Tstg |
−55~150 |
°C |
Note: Note 1, Note 2, Note 3, Note 4See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..