TPC8003

Features: `Small footprint due to small and thin package`Low drain−source ON resistance : R DS (ON) = 5.4 m (typ.)`High forward transfer admittance : |Yfs| = 21 S (typ.)`Low leakage current : IDSS = 10 A (max) (VDS = 30 V)`Enhancement mode : Vth = 0.8~2.5 V (VDS = 10 V, ID = 1 mA)Specificati...

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SeekIC No. : 004526140 Detail

TPC8003: Features: `Small footprint due to small and thin package`Low drain−source ON resistance : R DS (ON) = 5.4 m (typ.)`High forward transfer admittance : |Yfs| = 21 S (typ.)`Low leakage current : ...

floor Price/Ceiling Price

Part Number:
TPC8003
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

`Small footprint due to small and thin package
`Low drain−source ON resistance : R DS (ON) = 5.4 m (typ.)
`High forward transfer admittance : |Yfs| = 21 S (typ.)
`Low leakage current : IDSS = 10 A (max) (VDS = 30 V)
`Enhancement mode : Vth = 0.8~2.5 V (VDS = 10 V, ID = 1 mA)



Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
13
A
Pulse (Note 1)
IDP
52
Drain power dissipation (t = 10s)
(Note 2a)
PD
2.4
W
Drain power dissipation (t =10 s)
(Note 2a)
PD
1.0
W
Single pulse avalanche energy (Note3)
EAS
220
mJ
Avalanche current
IAR
13
A
Repetitive avalanche energy
(Note 4)
EAR
0.24
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: Note 1, Note 2, Note 3, Note 4See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..




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