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TPC8001

Features: `Small footprint due to small and thin package`Low drain−source ON resistance : R DS (ON) =15 m (typ.)`High forward transfer admittance : |Yfs| = 11S (typ.)`Low leakage current : IDSS = 10 A (max) (VDS = 30 V)`Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)Specific...

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SeekIC No. : 004526138 Detail

TPC8001: Features: `Small footprint due to small and thin package`Low drain−source ON resistance : R DS (ON) =15 m (typ.)`High forward transfer admittance : |Yfs| = 11S (typ.)`Low leakage current : IDS...

TPC8001 Data Sheet

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Part Number:
TPC8001
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Small footprint due to small and thin package
`Low drain−source ON resistance : R DS (ON) = 15 m (typ.)
`High forward transfer admittance : |Yfs| = 11S (typ.)
`Low leakage current : IDSS = 10 A (max) (VDS = 30 V)
`Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
7
A
Pulse (Note 1)
IDP
28
Drain power dissipation (t = 10s)
(Note 2a)
PD
2.4
W
Drain power dissipation (t = 10 s)
(Note 2a)
PD
1.0
W
Single pulse avalanche energy (Note3)
EAS
64
mJ
Avalanche current
IAR
7
A
Repetitive avalanche energy
(Note 4)
EAR
0.24
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: Note 1, Note 2, Note 3, Note 4  See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..




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