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TPC6603

Features: • High DC current gain: hFE = 200 to 500 (IC = −0.5 A)• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)• High-speed switching: tf = 40 ns (typ.)Specifications Characteristic Symbol Rating Unit Collector-base voltage VCBO ...

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TPC6603: Features: • High DC current gain: hFE = 200 to 500 (IC = −0.5 A)• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)• High-speed switching: tf = 40 ns (typ.)Sp...

TPC6603 Data Sheet

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Part Number:
TPC6603
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Total Cost: $ 0.00

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Product Details

Description



Features:

• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)
• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)
• High-speed switching: tf = 40 ns (typ.)


Specifications

Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
−30
V
Collector-emitter voltage
VCEO
−20
V
Emitter-base voltage
VEBO
-7
V
Collector current
DC
IC
−3.0
A
Pulse
ICP
−5.0
Base current
IB
−0.3
mA
Collector power
dissipation
DC
PC (Note 1)
0.8
W
t = 10 s
1.6
Junction temperature
Tj
150
Storage temperature range
Tstg
−55 to 150

Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook "Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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