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TPC6501

Features: • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A)• Low collector-emitter saturation voltage: V CE (sat) = 0.12 V (max)• High-speed switching: tf = 25 ns (typ.)Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO 2...

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TPC6501: Features: • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A)• Low collector-emitter saturation voltage: V CE (sat) = 0.12 V (max)• High-speed switching: tf = 25 ns (typ.)Specif...

TPC6501 Data Sheet

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Part Number:
TPC6501
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High DC current gain: hFE = 400 to 1000 (IC = 0.2 A)
• Low collector-emitter saturation voltage: V CE (sat) = 0.12 V (max)
• High-speed switching: tf = 25 ns (typ.)


Specifications

Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
7
V

Collector current

DC
IC
2.0
A

Pulse

ICP

3.5

Base current
IB
200
mA

Collector powerdissipation

DC
PC
(Note)
0.8
W

t = 10 s

1.6

Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)




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