Features: • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7.4 S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement-...
TPC6108: Features: • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7.4 S (typ.) &...
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TVS Diodes - Transient Voltage Suppressors 1.5KW 6.8V 5% Unidir
US $.24 - .24 / Piece
TVS Diodes - Transient Voltage Suppressors 1.5KW 6.8V 5% Unidir
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 7.4 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
• Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Characteristics |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDSS |
−30 |
V | |
Drain-gate voltage (RGS = 20 kΩ) |
VDGR |
−30 |
V | |
Gate-source voltage |
VGSS |
±20 |
V | |
Drain current |
DC (Note 1) |
ID |
−4.5 |
A |
Pulse (Note 1) |
IDP |
−18 | ||
Drain power dissipation(t = 5 s) (Note 2a) |
PD |
2.2 |
W | |
Drain power dissipation(t = 5 s) (Note 2b) |
PD |
0.7 | ||
Single pulse avalanche energy (Note 4) |
EAS |
1.3 |
mJ | |
Avalanche current |
IAR |
−2.25 |
A | |
Repetitive avalanche energy |
EAR |
0.22 |
mJ | |
Channel temperature |
Tch |
150 |
°C | |
Storage temperature range |
Tstg |
−55~150 |
°C |