TPC6105

      Here is the description about TPC6105 of the TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III).
      Here are its maximum ratings of TPC6105.  The Drain-source voltage is -20V. The Drain-gate voltage (RGS 20k?) is -20V. The Gate-source voltage is ±8V. The Drain current: DC (Note 1) is -2.7A; Pulse (Note 1) is -10.8A. Drain power dissipation (t=5 s) (Note 2a) is 2.2W.The Drain power dissipation (t=5 s) (Note 2b) is 0.7W. Single pulse avalanche energy (Note 3) is 1.2mJ. The Avalanche current is -1.35A. The Repetitive avalanche energy (Note 4) is 0.22mJ. The Channel temperature is 150°C. The Storage temperature range is -55~150°C.
      Here are the notes of TPC6105. Note 1: Ensure that the channel temperature does not exceed 150. Note 2: (a) Device mounted on a glass-epoxy board (a) (t=5s);(b) Device mounted on a glass-epoxy board (b) (t=5 s). Note 3: VDD =-16 V, Tch=25°C (initial), L=0.5 mH, RG=25?, IAR=-1.35A. Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: on the lower left of the marking indicates Pin 1.
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