TPC6101 Selling Leads, Price trend, TPC6101 DataSheet download, circuit diagram from SeekIC.com

Features: `Low drain-source ON resistance: R DS (ON) = 48 m (typ.)`High forward transfer admittance: |Yfs| = 8.2 S (typ.)`Low leakage current: IDSS = −10 A (max) (VDS = −20 V)`Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 A)PinoutSpecifications...

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TPC6101: Features: `Low drain-source ON resistance: R DS (ON) = 48 m (typ.)`High forward transfer admittance: |Yfs| = 8.2 S (typ.)`Low leakage current: IDSS = −10 A (max) (VDS = −20 V)`Enhancemen...

TPC6101 Data Sheet

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Part Number:: TPC6101
Supply Ability:: 5000

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Upload time: 2025/1/11

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TPC6.8 evaluate
Features: • Very low profile - typical height of 1.1 mm• Ideal for automated placement...
TPC6.8A-E3/86A evaluate
US $.35 - .46 / Piece

TVS Diodes - Transient Voltage Suppressors 1.5KW 6.8V 5% Unidir
TPC6.8A-E3/87A evaluate
US $.24 - .24 / Piece

TVS Diodes - Transient Voltage Suppressors 1.5KW 6.8V 5% Unidir

Product Details

Description

Features:

`Low drain-source ON resistance: R _{DS (ON)} = 48 m (typ.)
`High forward transfer admittance: |Yfs| = 8.2 S (typ.)
`Low leakage current: I_DSS = −10 A (max) (V_DS = −20 V)
`Enhancement-model: V_th = −0.5 to −1.2 V (V_DS = −10 V, I_D = −200 A)

Pinout

Connection Diagram

Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	−20	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	-20	V
Gate-source voltage		V_GSS	±12	V
Drain current	DC (Note 1)	_ID	−4.5	A
Drain current	Pulse (Note 1)	I_DP	-18	A
Drain power dissipation (t = 5 s) (Note 2a)		P_D	2.2	W
Drain power dissipation (t = 10 s) (Note 2a)		P_D	0.7	W
Single pulse avalanche energy (Note3)		E_AS	3.3	mJ
Avalanche current		I_AR	-2.25	A
Repetitive avalanche energy (Note 4)		E_AR	0.22	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatically sensitive device. Please handle it with caution.

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TPC6101

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