TP7S8

The TP7S8 is designed as one kind of darlington transistor,the absolute maximum ratings of this part can be summarized as:(1)storage temperature:-55 to +150;(2)junction temperature:+150;(3)collector to base voltage:100 V;(4)collector to emitter voltage:100 V;(5)emitter to base voltage:7 V;(6)collector current DC:7 A;(8)collector current peak:14 A;(9)base current DC:0.5 A;(10)base current peak:1.0 A;(11)total transistor dissipation:30 W;(12)dielectric strength:2 KV;(13)mounting torque:0.5 N`m.

The electrical characteristics of the TP7S8 can also be summarized as:(1)collector cutoff current:0.1 mA(max.);(2)emitter cutoff current:5 mA;(3)DC current gain:1500 to 30000;(4)collector to emitter saturation voltage:1.5 V;(5)base to emitter saturation voltage:2.0 V;(6)thermal resistance:4.16/W;(7)transition frequency:20 MHz;(8)turn on time:2 us;(9)storage time:2 us;(10)fall time:5 us.if you want to know more information about TP7S8, please download the datasheet in www.seekic.com and www.chinaicmart.com