TP2317

The TP2317 is designed as one kind of VHF power transistor,it has been specifically designed and characterized for 12.5 V operation in 175 MHz high power amplifiers.Its construction which incorporates gold metallization and diffused ballast resistors enables the part to withstand infinite VSWR at all phase angles at rated output power.

Features of the TP2317 are:(1)20 W;(2)high gain:10 dB min @ 175 MHz;(3)12.5 V-Vcc;(4)gold metallization for reliability.And the absolute maximum ratings of the TP2033 are:(1)collector-emitter voltage:16 Vdc;(2)collector-base voltage:36 Vdc;(3)emitter-base voltage:4 Vdc;(4)collector current-continuous:8 Adc;(5)total device dissipation @ Tc=25:80 watts;(6)derate above 25:0.46 W/;(7)operating junction temperature:200;(8)storage temperature range:-65 to +200;(9)thermal resistance,junction to case:2.2 /W;(10)collector-emitter breakdown voltage(Ic=50 mA,Ib=0):16 Vdc;(11)collector-base breakdown voltage(Ic=50 mA,Ie=0):36 Vdc;(12)emitter-base breakdown voltage(Ie=5 mA,Ic=0):4 Vdc;(13)collector cutoff current(Vce=15 V,Vbe=0):10 mAdc;(14)DC current gain:10;(15)output capacitance:70 to 100 pF.