TP1220L

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 120 V
Package / Case : TO-92
Continuous Drain Current : 0.12 A
Resistance Drain-Source RDS (on) : 20 Ohms


Features:






Specifications






Description

The TP1220L is designed as one kind of P-channel enhancement-mode mosfet transistors and produced by the TEMIC semiconductors.TP1220L can be used in drivers:such as relays,solenoids,lamps,hammers,displays,memories and transistors,etc.;and power supply,converters,motor control and switches.Benefits of this type:(1)ease in driving switches;(2)full-voltage operation;(3)low offset voltage;(4)easily driven without buffer and (5)no high-temperature"run-away".

Features of TP1220L like high-side switching;secondary breakdown free:-220V;low on-resistance:11.5 and low-power/voltage driven;excellent thermal stability are also very important.The absolute maximum ratings can be summarized as:(1)drain-source voltage:-120 V;(2)gate-source voltage:+/- 20 V;(3)continuous drain current(Tj=150):-0.12 A(Ta=25);(4)continuous drain current(Tj=150):-0.08 A(Ta=100);(5)pilsed drain current:-0.48 A;(6)power dissipation:0.8 W(Ta=25) and 0.32(Ta=100);(7)maximum junction-to-ambient:156 /W;(8)operating junction and storage temperature range:-55 to +150.