MOSFET 20V 0.41A
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.41 A |
Resistance Drain-Source RDS (on) : | 1400 mOhms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
Package / Case : | TO-236-3 |
Parameter |
Symbol |
Limit |
Unit | |
Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
20 ±20 |
V | |
Continuous Drain Current (TJ = 150) | TA= 25 TA= 70 |
ID |
0.31 0.25 |
A |
Pulsed Drain Currenta |
IDM |
0.75 | ||
Power Dissipation | TA= 25 TA= 70 |
Pd |
0.2 0.128 |
W |
Maximum Junction-to-Ambient |
Pthja |
625 |
/W | |
Operating Junction and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
|